Abstract
Surface treatment is very important for detector-grade Cd1−xZnxTe crystals. In this paper, electrical properties of detector-grade Cd1−xZnxTe single crystals passivated by KMnO 4 and K2S2O8 solutions were investigated. Four passivation agents, H2O2, (NH4)2S, KMnO 4 and K2S2O8, were compared. The results indicated that the leakage current decreased obviously after passivation. It was found that KMnO 4 and K2S2O8 had better passivation effect. When the passivation time was 1 min and 2 min, KMnO 4 had the best passivation effect, and the leakage current of Cd1−xZnxTe crystal was as low as 1.3 nA. However, when the passivation time was 5 min, the passivation effect of K2S2O8 was the best, and the leakage current was as low as 0.7 nA. The chemical reactions of KMnO4 and K2S2O8 with Cd1−xZnxTe crystals were proposed due to XPS analysis. PL spectra showed that the surface properties of the Cd1−xZnxTe crystals changed obviously after passivation. 241Am γ-ray @59.5 keV energy resolution of the detectors fabricated with the crystals passivated by KMnO 4 and K2S2O8 solutions for 5 min were notably improved. In particular, the energy resolution of Cd1−xZnxTe planar detector with K2S2O8 passivation could reach 8.03% and was improved by 236%.
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