Abstract
A MOVPE InN film with a carrier concentration in the order of 1018 cm—3 is successfully grown for the first time by using the atmospheric-pressure growth. Employing a reduced gas speed due to the atmospheric pressure and a reduced dilution N2 gas flow rate, a carrier concentration of 5.8 × 1018 cm—3 has been attained with a high electron mobility. The optimum growth temperature for the atmospheric pressure as well as reduced-pressure MOVPE growth is found to be around 600 °C. It is found that sample with a relatively smooth surface has a mobility similar to the sample with lowest carrier concentration in spite of a relatively high carrier concentration, 730 cm2/V s, 2 × 1019 cm—3 and 700 cm2/V s, 6 × 1018 cm—3, showing that morphology is also one of the important factors to attain high electron mobility.
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