Abstract
We have investigated the effect of high-pressure hydrogen annealing (HPHA) on fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs). The relatively high interface state density of back interface induces significant performance degradation due to the strong interface coupling effect between the front and back interface. To reduce this problem, we performed HPHA in 100% hydrogen ambient at 10 atm. We found that HPHA can significantly reduce the interface state density of both front and back interfaces, which in turn improves electron mobility. Considering the simple process condition and improved electrical characteristics, HPHA is a promising process technology for SOI MOSFETs.
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