Abstract
As the DRAM design rule has been smaller, the leaning normally occurred in storage pattern with high aspect ratio also appears in STI (shallow trench isolation) pattern of sub 4Xnm device. IPA (isopropyl alcohol) showing the excellent ability to replace DIW (de-ionized water) is necessary in order to meet the leaning free condition, because the spin drying method cannot satisfy with leaning free condition.
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