Improved DRUS 4H-SiC MESFET with High Power Added Efficiency.

Hujun Jia,Tao Li,Tonghui Zeng,Yuan Liang,Shunwei Zhu,Yintang Yang,Xingyu Wang,Yibo Tong

doi:10.3390/mi11010035

Hujun Jia, Tao Li + Show 6 more

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https://doi.org/10.3390/mi11010035

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Journal: Micromachines	Publication Date: Dec 27, 2019
Citations: 4	License type: CC BY 4.0

Affiliation: Xidian University

Abstract

A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has decreased, the decrease is within an acceptable range. Meanwhile, the LDUS-MESFET has a smaller gate-source capacitance and a large transconductance. Therefore, the LDUS-MESFET can better balance DC and AC characteristics and improve power added efficiency (PAE).

Highlights

As a third-generation semiconductor, silicon carbide (SiC) has significant advantages in materials and devices, with high critical electrical field, high thermal conductivity, and high electron saturation velocity [1,2,3]
The DC and AC parameters of the device are obtained by ISE-TCAD simulation, and simulation, and these parameters are input into the ADS software to simulate the power added these parameters are input into the ADS software to simulate the power added efficiency of the device
When H1 is greater than 0.05 μm, the absolute value of V t is produces a longitudinal electric field that weakens the pinch-off voltage, which results in a decrease increasing with increase as theWhen doping number in thethe absolute valueof of the

Summary

Introduction

As a third-generation semiconductor, silicon carbide (SiC) has significant advantages in materials and devices, with high critical electrical field, high thermal conductivity, and high electron saturation velocity [1,2,3]. SiC based metal-semiconductor field-effect transistors (MESFETs) have become the key components for high-power, high-efficiency and high-frequency microwave applications because of their excellent properties. They offer wider bandwidth operation and lower system size than Si and. GaAs based on MESFET technologies [4,5,6,7] Based on those excellent performance, 4H-SiC MESFETs have broad application prospects in aerospace, satellite communications, and active phased array radars. Some improved structures have been reported for improving the power added efficiency.

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