Abstract
In this paper, we focus on the improvement of comprehensive device performance of Silicon Nanotube Tunnel Field Effect Transistor (NT_TFET) for ultra low power applications. In the design we have implanted 2nm Halo region at the source side of Si NT_TFET for improving the subthreshold swing and short channel effects (SCEs). To prove the concept, the performance of Silicon Nanowire tunnel FET (NW_TFET), Silicon Nanotube TFET without Halo (NT_TFET) and Silicon Nanotube TFET with halo (NT_FET_HALO) implant are compared. The impact of halo doping profile on the Subthreshold swing, ON and OFF current are investigated. Further, the degradation of OFF state current due to Halo doping is controlled by lightly doped drain.
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