Abstract
The electrical and dielectric properties of Ba0.8Sr0.2TiO3 thin films and Ba0.8Sr0.2TiO3/ZrO2 multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by sol-gel method are studied. The temperature dependence of the dielectric properties for pure Ba0.8Sr0.2TiO3 film and Ba0.8Sr0.2TiO3/ZrO2 multilayer films has been studied in the temperature range from 90 to 500 K. Both dielectric constant and dielectric loss exhibit minimal dispersion as a function of temperature in this range. It is observed that dielectric constant, dielectric loss, and tunability are reduced for multilayer thin films. Additionally, the ferroelectricity disappears in multilayer thin films. Our results show that the multilayered Ba0.8Sr0.2TiO3/ZrO2 design has excellent dielectric properties and they are stable over a broad temperature range (90–500 K), thereby making them excellent candidates for the next generation of enhanced performance temperature stable microwave devices.
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