Improved device performance in a CNTFET using La $$_{2}$$ 2 O $$_{3}$$ 3 high- $$\kappa $$ κ dielectrics

Abstract

The scaling of MOSFETs is an important and effective way for achieving high performance and low power consumption. One of the bottlenecks for scaling is the physical gate oxide thickness. This paper presents and evaluates a new method for scaling carbon nanotube field-effect transistors (CNTFETs) using $$\hbox {La}_{2}\hbox {O}_{3}$$La2O3 as a new gate dielectric, which has excellent electrical properties. The proposed CNTFET is simulated using HSPICE. Some of the main digital and analog parameters such as current ratio, subthreshold swing (SS), transconductance, and intrinsic gain have been studied. The simulation results show that the proposed CNTFET outperforms present CNTFETs in terms of current ratio, transconductance, and intrinsic gain.