Abstract
The hydrogen sensing characteristics of Pt/GaN (metal/semiconductor, MS) type and Pt/β-Ga 2O 3/GaN (metal/reactive insulator/semiconductor, MIS) type hydrogen sensor diodes under hydrogen containing ambience were measured at room temperature. The MIS-type sensor diodes were fabricated in which the β-Ga 2O 3 oxide layers were directly grown on GaN layer using a photoelectrochemical oxidation method and then annealed in O 2 ambience at 700 °C for 2 h. The Pt/β-Ga 2O 3/GaN sensors exhibited high hydrogen sensing ability. The experimental results demonstrated that the β-Ga 2O 3 layer played an important role in the MIS-type hydrogen sensor diodes.
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