Abstract
The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO3 and heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to $2.43\times 10^{12} ~\Omega $ compared with $7.94\times 10^{11} ~\Omega $ of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 ultraviolet photodetectors, the zero bias dynamic resistance was further improved to $6.02\times 10^{12}~\Omega $ . The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn3Ta2O5 absorption layer and the PEC oxidation method.
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