Abstract
An improved design of silicon-on-insulator based 8 × 8 AWG multiplexer is presented using tapered entry into the slab waveguide. Our simulation result clearly shows significant enhancement of electric field from 0.44 V/m to 0.732 V/m, reduction in insertion loss from 7.13 db to 2.7 db, with bandwidth of 230 GHz and channel spacing 200 GHz while keeping other parameters within acceptable limits.
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