Abstract
Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.
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