Abstract
Contact resistivity ( ρc ) for silicon solar cells is often measured using a pseudo-TLM pattern of equally spaced gridlines, which is cut from the cell itself. In this measurement, the uncontacted (floating) gridlines between two contacted gridlines are usually assumed to be disconnected from the silicon sheet. Analysis of such TLM data yields an approximate value of ρc , which is reasonably accurate for LT / L > 1, but increasingly less accurate for LT / L x /AlO x or SiN x ) to contact a p+-poly (p-TOPCon) layer, an n+-poly (n-TOPCon) layer, or a p+-boron (p-diffused) layer. The improved TLM analysis gave ρc values of 3.51, 0.89, and 5.26 mΩ·cm2, respectively. Analysis of the n-TOPCon data is complicated by 2-D current flow across the tunneling oxide and into the n-substrate, with corresponding uncertainty. Expressions for converting ρc to a component of series resistance are also given. Additional calculations were carried out to determine ρc error with approximate TLM analysis. With assumed LT / L values of 1, 0.5, and 0.25, the errors are 3.7%, 41%, and 280%, respectively.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call