Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure

Abstract

Resistive random access memory (RRAM) has attracted considerable attention due to its fast access speed and high storage density. Two different reset modes (progressive reset and abrupt reset) of RRAM have been observed previously, the former showing good uniformity but small switching window, while the latter having large switching window but poor stability and high power consumption. To overcome these limitations, an approach was proposed to control the formation and fracture of conductive filaments with interface engineering, specifically by adding a SiO2 limiting layer and MoS2 quantum dots (QDs). Modified with a SiO2/MoS2 QD hybrid structure, the Al2O3-based RRAM transforms from progressive reset mode to abrupt reset mode. The insertion not only expands the switching window by more than 100 times with excellent readability but also dramatically reduces the power consumption (<5 μW), accompanied by extremely high uniformity and reliability, which demonstrates significant potential for nonvolatile memory application. Meanwhile, the design viewpoint of combining functional layers with quantum dots provides an excellent strategy for enhancing RRAM performance in the future.