Improved Air Spacer for Highly Scaled CMOS Technology

Abstract

We report an improved air spacer (AS) integration scheme to overcome problems with the conventional AS process. The new scheme is fully compatible with other emerging CMOS technology elements such as self-aligned contact (SAC) and contact over active gate (COAG). Using a fan-out3 (FO3) ring oscillator (RO) on a 10-nm FinFET platform, we experimentally demonstrate that the new AS provides 15% reduction in the effective capacitance ( ${C}_{{\text {eff}}}{)}$ . Such a ${C}_{{\text {eff}}}$ reduction translates to 21% performance gain at the constant power (iso-power) or 36% power reduction at the constant performance (iso-speed). The benefits provided by AS exceed the benefits of a full CMOS node scaling from 7 to 5 nm. Clearly, AS is a viable technological element for continuing CMOS scaling.