Abstract
An improved 4H–SiC power MESFET with double source field plates (DSFP) for high-power applications is proposed (DSFP-MESFET). The DSFP structure significantly modifies the electric field in the drift layer. The influence of the DSFP structure on saturation current, breakdown voltage (Vb), and small-signal characteristics of the DSFP-MESFET were studied by numerical device simulation. The Vb of 359V is obtained for the DSFP-MESFET compared to 301V of the conventional source field plate MESFET (LSFP-MESFET). Hence, the maximum output power density of 24.7 and 21.8W/mm are achieved for the DSFP-MESFET and LSFP-MESFET, respectively, which means 13% improvement for the proposed device. Also, the cut-off frequency (fT) of 24.5 and the maximum oscillation frequency (fmax) of 89.1GHz for the 4H–SiC DSFP-MESFET are obtained compared to 23.1 and 85.3GHz for that of the LSFP-MESFET structure, respectively. The DSFP-MESFET shows a superior maximum stable gain (MSG) exceeding 23.3dB at 3.1GHz, which is presenting the potential of the proposed device for high-power operations.
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