Abstract
ATLAS TCAD based comparative investigation of DC and AC characteristics has been presented in this work for different FP structure of AlGaN/GaN HEMT i.e. Source Field, Gate Field Plate and combination of Source and Gate Field Plate. FP structures are optimized to achieve higher breakdown voltage, optimum transconductance, cutoff frequency and parasitic capacitances. Influence of length of FP (both source and gate), nucleation layer thickness (t NL ), effective passivation layer thickness and spacer layer on breakdown voltage has also been examined through extensive device simulation. In the present work, 1180 V of breakdown voltage and 8.64 GHz cut-off frequency has been achieved by amalgamating both source field plate (length 3 μm)and Gate field plate (length 4 μm).
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