Abstract
This paper presents low-frequency noise in cSi0.75Ge0.25 and cSi0.65Ge0.35 p- and n-channel compressively strained Silicon–Germanium on Insulator (cSGOI) MOSFETs with 15nm thick SiGe films and with TiN/HfO2/SiO2 gate stacks, obtained using the enrichment technique. In strong inversion, front and back interface current noise in PMOSFET devices is described using the ΔN model, whereas NMOSFET noise is described using the ΔN–Δμ model. In weak inversion, the noise behavior deviates from these standard models. We observe an impact of the back interface noise source on the front interface one and vice versa. Thus, the interface trap densities and the Coulomb scattering parameters are extracted. The obtained interface trap densities values demonstrate the good quality of both interfaces.
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