Abstract
Silicon carbide is a material with a multistable crystallographic structure, i.e., a polytypic material. Different polytypes exhibit different band gaps and electronic properties with nearly identical basal plane lattice constants, making them interesting for heterostructures without concentration gradients. The controlled formation of this heterostructure is still a challenge. The ability to adjust a defined temperature–time profile using rapid thermal processing was used to imprint the polytype transitions by controlling the nucleation and structural evolution during the temperature ramp-up and the steady state. The influence of the linear heating-up rate velocity during ramp-up and steady-state temperature on the crystal structure of amorphized ion-implanted silicon carbide layers was studied and used to form heteropolytype structures. Integrating the structural selection properties of the non-isothermal annealing stage of the ion-implanted layers into an epitaxial growth process allows the imprinting of polytype patterns in epitaxial layers due to the structural replication of the polytype pattern during epitaxial growth. The developed methodology paves the way for structural selection and vertical and lateral polytype patterning. In rapid thermal chemical vapor deposition, the adjustment of the process parameters or the buffer layer allowed the nucleation and growth of wurtzite silicon carbide.
Highlights
Silicon carbide (SiC) is a wide band gap semiconductor material with properties making it unique for many applications
In the case of SiC, rapid thermal processing was mostly applied to implant annealing [12,13,14], ohmic [15,16,17] and Schottky contact formation [16,18], carbonization of silicon substrates [19,20], SiC on Si epitaxial growth by rapid thermal chemical vapor deposition [21,22], Crystals 2020, 10, 523; doi:10.3390/cryst10060523
The first type is based on direct heating of graphite constructions, whereas the second type uses halogen lamps as heating elements, i.e., the standard rapid thermal processing (RTP) technology used in silicon manufacturing technology
Summary
Silicon carbide (SiC) is a wide band gap semiconductor material with properties making it unique for many applications. Less attention was given to the possibility of the defined adjustment of a desired temperature–time profile, which allows control of the nucleation and structural evolution during the ramp-up and steady state This is important, especially in the case of materials with a multistable crystal structure, which may occur in the form of different polymorphic or polytypic structures [30]. The simultaneous selective deposition of two or more chemically identical phases having different physical properties on different regions of a patterned substrate or, alternatively, their controlled transformation in desired areas into another crystal structure [37,53,54,55,56,57,58] could pave the way for the development of new structure and device formation technologies. For structural control at low temperatures, the silicon to carbon ration and the replication of the polytype structure of the buffer layer formed on the silicon substrate are the key to nucleate and grow an unusual silicon carbide polytype 2H
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