Abstract
The imprint characteristics of SrBi2Ta2O9, SBT, and (Bi0.8La0.2)4Ti3O12, BLT, thin film capacitors have been evaluated at the storage temperature of 125 □. The coercive voltage shift and the polarization loss occurred as a function of the logarithmic storage time. BLT capacitors showed more stable imprint characteristics than SBT. The increasing rate of the coercive voltage shift and the decreasing rate of the polarization loss of BLT with a storage time were smaller than that of SBT. The BL sensing signals were measured on 2T2C-256 Kbits FeRAM adopted SBT and BLT capacitor in order to estimate the imprint life times of the devices, respectively.
Published Version
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