Abstract
In this paper, behavioral modeling of a driver amplifier is implemented by using S2P and S2D model setup. By using the standard silicon-based driver amplifier for obtaining the measured results of Scattering (S)- parameters and large signal parameters for temperatures 25°C and 85°C. These parameters are imported into the S2P and S2D models to perform the small signal and large signal analysis at 3 GHz frequency for temperatures 25°C and 85°C. Then, the simulated results are compared with the measured results to verify the efficient utilization of behavioral models. The novelty of this work deals with the simulation study of the characteristics of a silicon-based driver amplifier, which are obtained directly from the measurements. This proposed method is essential for performing hetero-integration of transceiver design, which can be further utilized to improve the efficiency of transceiver for high-frequency band. At last, the study of relative error performance analysis between measured and simulated results of different parameters is carried out and calculated value of NMSE (in %) for S11, S12, S21, S22, gain, pout, 1 dB compression point, ACP, 3rd harmonics, 4th harmonics, and 5th harmonics are 0.0083, 0.0055, 0.0086, 0.011, 0.0844, 0.814, 0.926, 0.71, 0.22, 0.012 and 0.070 respectively.
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