Small and large signal analysis using circuit model of InGaAs/InP based uni-travel carrier photodiode

Abstract

An equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and few important properties of the device such as the electrical and optical characteristics are evaluated by employing advanced device physics. Circuit model incorporates chip and package parasitic of the device quite simply to provide practical behaviour of UTC-PD. We have developed small signal ac circuit model which is useful for the analysis of low power modulation characteristics of the device and dc circuit model which is advantageous to find wavelength dependent responsivity fairly accurately. At high optical input power the device bandwidth is found to be increased through enhancement of self-induced field in the absorption region and high output power can be derived from the device when absorption width is large. Such condition calls for large signal analysis. We have developed large signal circuit model by combining few mathematical transformations with small signal circuit model with different circuit element values. Our large signal model is unique that the same circuit can be used for both small and large signal analysis. With large signal model the optical power induced bandwidth improvement and output photocurrent saturation are explained. Large signal model is validated through linearity and IP3 analysis which found close agreement with the measured results.