Abstract
Important issues which should be considered when optimizing RF discharges for use in plasma processing are discussed using results from electron kinetics and plasma chemistry models. Mixtures of Ar/SiH4 and H2/SiH4 are discussed as exemplary systems for the plasma deposition of amorphous silicon. The effect of dissociation of the feed stock gas on subsequent rates of dissociation is discussed, as is the effect of diluting silane discharges with argon.
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