Abstract
The MoS2 film for chip-size area was synthesized by two step processes consisting of MoS2-compound sputtering and post sulfurization. We intentionally revealed that the crystallinity of sulfurized MoS2 film depends on that of just-after-sputtered film. Therefore, a crystallinity improvement just-after sputtering is mandatory to achieve an excellent quality MoS2 film after sulfur-vapor annealing for thin film transistor, sensor and human interface device applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
