Abstract
Hydrogenated amorphous Si (a-Si:H) devices first made a significant impact in photovoltaic applications, 70% of the photovoltaic solar cells produced in Japan in 1984 were a-Si:H. More recently, thin film transistor (TFT) and sensor devices have been developed for consumer and business products. The ability to produce large area uniform films of a-Si:H makes the application of TFTs and sensors well suited for input and output imaging devices such as image scanners, display and printers. This paper reviews the operation, material issues and physics of a-Si:H TFTs and sensors. The circuit and technology issues in large area systems incorporating these devices are described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
