Abstract
The charge transport properties of 100 nm thick cobalt phthalocyanine (CoPc) films grown on single crystal Al2O3 (0001 oriented) and quartz substrates using molecular beam epitaxy, have been investigated as a function of applied bias (± 50 V) at room temperature. Films grown on Al2O3 are highly ordered and exhibited non‐hysteretic current‐voltage (J‐V) characteristics. On the other hand, films grown on quartz substrates are highly disordered and exhibited hysteretic J‐V characteristics due to charge trapping. The analysis of J‐V characteristics of films on Al2O3 substrates show that the transport is governed by shallow trap mediated space charge limited conduction (SCLC), while for the films grown on the quartz substrate transport is through the exponentially distributed traps mediated SCLC. X‐ray photoelectron spectroscopy data show that charge trapping centers in the films grown on quartz substrates are created by chemisorbed oxygen.
Published Version
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