Abstract
Different radial ionization profiles modeling approaches are compared for the energy deposition representation in a Single Event Effects (SEE) prediction tool. The total SEU cross section calculated with the different approaches is compared for various SOI and bulk technologies, along with the MBU prediction. A “refined average” approach is identified as a good trade-off for implementation in an engineer SEE prediction tool, taking into account sufficiently detailed physics to predict the sensitivity of SOI and bulk devices down to the 32 nm technological node, without asking for too much computer resources.
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