Implementation of Single-Electron Transistor with Resistive Gate

Abstract

We have fabricated and measured a resistively coupled single electron transistor (R-SET). In our implementation, a chromium thin-film resistive gate was connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx/Al tunnel junctions. The transistor was fabricated by electron beam lithography using the suspended bridge technique. We have measured the current-voltage-gate voltage dependences of the R-SET and observed a characteristic Coulomb blockade pattern. Our simulations based on the orthodox theory of single electron tunneling show good qualitative agreement with the experimental data.