Abstract
Multi-island single electron transistor (MISET) is a kind of single electron transistor (SET), which has advantages of the room temperature operating. A novel semi-empirical compact model for MISET is proposed. The new approach combines the orthodox theory of single electron tunneling for single coulomb island and a novel empirical analysis for a chain of coulomb islands. The model is verified by the Monte-Carlo method in SIMON simulator, and is much faster than the traditional multi-island SET simulator, which has the advantages for the large scale multi-island SET circuit simulation.
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