Abstract
InGaP/GaInAsN double heterojunction bipolar transistors (HBTs) with compositionally graded bases are presented which exhibit superior dc and radio frequency performance. Reducing the average base layer energy gap and optimizing the emitter-base (e-b) and base-collector (b-c) heterojunctions leads to a 100-mV reduction in the turn-on voltage compared to a baseline InGaP/GaAs process. Simultaneously grading the base layer energy band-gap results in over a 66% improvement in the dc current gain and up to a 35% increase in the unity gain cutoff frequency. DC current gains as high as 250 and cutoff frequencies of 70 GHz are demonstrated. In addition, the InGaP/GaInAsN DHBT structure significantly reduces the common emitter offset and knee voltages, as well as improves the dc current gain temperature stability relative to standard InGaP/GaAs HBTs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
