Abstract
In recent years, multi-level cell (MLC) flash memories have been developed as an effective solution for increasing the storage density and reducing the cost of flash memories. MLC flash memories are especially for NAND flash memories . Error control coding (ECC) is essential for correcting errors in Flash memories.In order to correct multiple random errors and burst errors, an efficient decoding algorithms are required.In this work (255, 231) Product Reed-Solomon (RS) code technique for non-volatile NAND flash memory system sare used. In this proposed code that is Product Reed Solomon can correct both multiple random errors and burst errors. The Product Reed Solomon code consists of two shortened Reed-Solomon codes and a conventional Reed- Solomon code. It can correct up to certain symbol errors. A simulation result shows that the code has improved the coding gain and low power consumption.
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