Abstract
In situ non-invasive process monitoring and control during semiconductor epitaxy is a potential enabling technology that can transform the existing approach to epi-wafer manufacturing. In this paper, we describe the implementation of a multi-sensor system consisting of both process- and wafer-stage sensors on a multi-wafer production molecular beam epitaxy (MBE) tool. We also illustrate through a few examples how these sensors are used for device and calibration growth. Finally, we will discuss some challenges facing a sensor-based MBE system under a production environment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
