Abstract
The quantum transport model describing the Coulomb blockade observed in semiconductor quantum dot devices is implemented on a semiconductor device simulator. The model considers tunnel path change with varying applied voltage, due to carrier redistribution with changing the voltage, in semiconductor quantum dot devices. We applied the model to simulate characteristics of tunnel-FET-based quantum dot devices. We observed two Coulomb oscillation peaks in OFF-state voltage region in gate-voltage-drain-current curves. Also, a so-called Coulomb diamond, which is shown in a mapping of current-voltage characteristics of quantum dot devices, is successfully observed. Finally, we discuss the tunnel path depending on applied voltages, which implies that the simulation with the model successfully considers carrier redistribution in semiconductor quantum dot devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
