Implementation of Bilayer and OME Silicides with Emphasis on Contact Resistance for Si/SiGe-Heterojunction Bipolar Transistors

Abstract

Thin cobalt silicide layers were prepared on highly boron doped regions with bilayer and oxide mediated epitaxy (OME) processes. Sheet resistance, contact resistance, and thickness were measured. Contrary to low doped substrates, the results of OME processes for NH 4 OH and HCl OME differ considerably on highly doped boron regions. In this case, fabrication of integrated devices with OME-NH 4 OH silicide is not suitable.