Abstract
Memristors with small size, fast speed, low power, CMOS compatibility and nonvolatile modulation of device resistance are promising candidates for the next-generation data storage and in-memory logic computing paradigm. In comparison to the binary logics enabled by memristor devices, multi-valued logics can provide higher computation efficiency with simple operation scheme, reduced circuit complexity, and smaller chip area. In this contribution, we demonstrate that all the 27 univariate ternary logic operations can be realized with a single ZnO three-state resistive switching memristor in at most three steps. The nonvolatile modulation characteristics of the memristor allow the read step to be independent of the logic operation and capacitate logic-in-memory applications. The present methodology could be beneficial for constructing future high-performance computation architectures.
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