Implementation of 8-bit reservoir computing through volatile ZrOx-based memristor as a physical reservoir

Abstract

In this study, we employed a sputtering process to construct a memristive device within the ITO/ZrOx/TaN structure for implementing neuromorphic computing. Initially, we scanned the basic electrical properties of the ITO/ZrOx/TaN device using a DC voltage sweep on the top ITO electrode. A highly uniform gradual resistive switching phenomenon was observed over 100 cycles. The current decay in the low-resistance state was effectively controlled by the volatile memory properties. Gradual conductance changes for potentiation and depression were achieved by applying electrical pulses, enabling the establishment of multi-level conductance states. In addition, the emulation of various synaptic functions was achieved by following the learning rules of SRDP, EPSC, STDP, ADSP, Pavlovian associative learning, and PPF. Finally, 8-bit reservoir computing was demonstrated in cost-effective pattern generation and recognition, highlighting the ITO/ZrOx/TaN device’s advantageous memory storage properties for synaptic characteristics.