Abstract
The method of in-beam Mossbauer spectroscopy after recoil implantation of Coulomb excited nuclei is discussed and new setups are described. Particular aspects of time differential measurements are considered. Results obtained by implantation studies of Fe into Si and Al2O3 are presented. In silicon the long range diffusion of interstitially implanted iron atoms has been observed between 500 K and 650 K via diffusional linebroadening. The time differential spectra of Si and of Al2O3 do not show significant dynamic effects.
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