Abstract
ABSTRACTConstant-voltage stressing has been used to investigate the damage of SiO2 and the Si/SiO2 interface induced by silicon implantation through polysilicon/SiO2/P-Si structures annealed at 950°C. The implant doses used were from 5×1011cm-2 to 1014cm-2. Although no detectable interface states density was observed after the annealing for implant doses less than 2×1013cm-2, interface states generation, hole trapping, and electron trapping were found to be greatly enhanced by the Si implantation. The interface states density generation rate was found to increase with higher implant doses. The density of hole trapping centers saturated at a value of 3×1012cm-2 for implant doses higher than 2×1012cm∼-2. The density of electron trapping centers was found to increase with implant dose, while the associated trapping cross section was much smaller than that of the unimplant oxide.
Published Version
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