Abstract
We investigated the as-implanted profiles, electrical activation, diffusion, and recrystallization of gallium implanted in germanium samples through the combination of secondary-ion mass spectrometry, transmission electron microscopy, and sheet resistance measurement. Because of their high activation level without preamorphization, low activation temperature , and absence of diffusion (up to ), Ga junctions in crystalline Ge are very promising candidates for implementation in germanium technology. In the amorphous Ge phase, an increased diffusivity of Ga was observed at temperatures above .
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