Abstract
To investigate the influence of the residual implant damage and postimplant annealing upon the structure and magnetic properties of Mn-implanted Si, lattice disorder depth profiles were obtained from Rutherford backscattering spectroscopy (RBS)-channeling experiments on Mn-implanted ⟨100⟩ oriented p-type Si wafers. The defect concentration profiles were extracted from the RBS spectra using the two beam model. These profiles reveal a strong influence of the postimplant annealing temperatures upon the defects generated from implantation. Specifically, above 800°C, the backscattering yield from Si lattice defects decreases, which is coincident with a decrease in the magnetization. The evolution of the Mn concentration profiles and the magnetization suggest that the magnetization originates from Mn atoms located in the least damaged region.
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