Imperfections in Solution-Grown β-Silicon Carbide Crystals

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Imperfections in high-purity β-silicon carbide crystal platelets, (111) habit, were studied using Lang x-ray topography, Weissenberg photographs, and etch pitting. Stacking faults on {111} planes with associated partial dislocations of the 〈112〉 type and {111} twinning have been observed. In well-formed platelets, twinning is usually confined to the habit plane. Stacking faults occur parallel with the platelet surface and on {111} planes inclined to the platelet surface, and they tend to cluster in overlapping, closely spaced groups. Etch pits on the surface are caused by emerging 〈112〉 partial dislocations that bound the inclined stacking faults. Partial dislocations in the habit plane have also been identified from diffraction contrast and extinction effects.