Abstract
Chalcogenide compound Bornite (Cu5FeS4) was prepared by hydrothermal synthesis method. Here, Citric acid (CA) was introduced in the hydrothermal reaction as a chelating agent to get the phase purity in the Bornite product. The room temperature Powder X-Ray Diffraction (PXRD) confirms the phase purity with cubic crystal structure. The Field Emission Scanning Electron Microscope (FESEM) image confirms the formation of flower shaped micro architecture consisting nano-flakes of the synthesized Bornite material and the optical band gap energy (=1.87 eV) was estimated from UV-VIS absorption spectra. Room temperature (303 K) Complex Impedance Spectroscopy (CIS) study for different forward dc bias voltages (0V-0.8V) on the thin film of synthesized material was performed. CIS analysis demonstrates the relaxation phenomenon and decrease in bulk resistance with increasing forward dc bias voltages reveals the involvement of bulk resistance in electrical conduction mechanism. Moreover the dependency of ac/dc conductivity on the forward dc bias voltage was analyzed on the basis of hopping mechanism for electrical transport processes.
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