Abstract
The complex impedance spectroscopy in the frequency range 100–1MHz and temperature range 300–475K is used to study the electrical properties of the bulk ternary semiconductor compound Cu2SnS3. The dynamic electrical conductivity study shows that correlated barrier hopping model may be appropriate to describe the transport mechanism in our material. The dependences of dielectric parameters by fitting data with Cole–Cole equations on temperature have been discussed in detail. Relaxation time was found to decrease with increasing temperature and to obey the Arrhenius relationship. The values of calculated resistances for bulk were found to be smaller compared with that of grain boundary contributions.
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