Impedance spectroscopy of amorphous/crystalline silicon heterojunction solar cells under dark and illumination

Abstract

In this article, the electronic properties of a-Si:H/c-Si heterojunction (SHJ) solar cells are analyzed by performing impedance spectroscopy (IS) characterization in the dark and under controlled illuminations. Various dynamic electrical processes occurring at different time scales, ranging from microseconds to milliseconds, are observed mainly in the operating regime of the device. Several distinct characteristics are observed: a) time constant distribution characteristic of the disordered junction, b) typical bias voltage and illumination intensity dependence of the recombination time constant, and c) an additional time constant indicative of a fast process, which appears only under illumination. The impedance spectra of the SHJ cell are best modelled by including a dispersion element, the constant phase element (CPE), in place of a pure capacitor, in its small signal electrical equivalent circuit (EEC), aside from the pure resistive and capacitive elements arranged in a simple configuration. The CPE behavior is assigned to the complex small signal response originating from the distribution of trap levels in the disordered p+-a-Si:H/n-Si heterojunction. Under illumination, a distinct dynamic process is observed compared to the dark condition in the impedance spectra of the device. The variation of the dispersion parameter, resistances, capacitance, and time constants with external stimuli is discussed. In particular, the variation of the recombination time constant with bias is remarkable under different illumination intensities due to the change in the quasi-fermi levels splitting.