Abstract
The a.c. behavior of a semiconductor-insulator-metal capacitor is analyzed as a function of the frequency of a small a.c. voltage and of a d.c. bias voltage. Our analysis differs from previous work by G arrett, B erz and Y unovich, respectively, which dealt mainly with field effect conductivity, in the following respects: 1. Both (I), the extreme case of negligible recombination rate in the space-charge layer, and (II) the opposite extreme case of infinite recombination rate in the space-charge layer, are treated. 2. Deviations from the Boltzmann distributions of carriers in the space-charge layer at current flow are taken into account. 3. Equivalent circuits are derived from which the frequency dependence and the loss angle can be more readily appreciated than from the involved analytic expressions for the impedance. 4. Graphs are provided for the determination of the impedance as function of bias, frequency and of resistivity of the semiconductor for a semiconductor free of surface states.
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