Abstract
Aluminum-doped zinc oxide (AZO) films were deposited on glass substrates at 300°C by reactive mid-frequency (mf, 50 kHz) magnetron sputtering using dual magnetron cathodes with aluminum–zinc alloy targets. In order to keep the very high deposition rate stable in the transition region of the reactive sputtering system, the reactive gas (O2) flow was controlled using the “discharge impedance feedback system”, where the discharge current value was used to control the O2 flow. The highest deposition rate for the transparent conductive AZO films achieved by this dual magnetron sputtering (DMS) system was 242 nm/min, which was higher by one order of magnitude than that achieved by the conventional reactive sputtering system. The lowest resistivity of the AZO film obtained by such a high deposition rate was 4.4×10-4 Ωcm. The structure and electrical properties of the films varied systematically by controlling the discharge current in the transition region using this system.
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