Abstract
In soft recovery diodes, a reverse current peak followed by high frequency IMPATT oscillations with limited duration is observed for a sufficient high battery voltage in the temperature range T<300 K. The IMPATT oscillations of diodes irradiated with e −- and He 2+-rays are caused by temporarily positive charged deep donors, most probably due to the induced K-defects. They temporarily reduce the avalanche breakdown voltage of the Device. The effect can be generated or avoided by using special conditions during the high-dose electron irradiation. A preliminary model for the threshold voltage of the temporary IMPATT oscillation is given.
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