Abstract
A novel soft recovery diode, called middle broad buffer layer (MBBL) diode, has been investigated for the first time. It has a broad buffer layer in the middle of a N-drift region, in order to reduce the electric field strength during reverse recovery. This prevents a snappy reverse recovery, due to the large amount of remaining stored charges. The width and the donor concentration in the middle buffer layer are optimized to keep a sufficient high blocking voltage. The trade-off relationship between the reverse recovery loss and the forward voltage drops can also be improved by having soft recovery characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
