Abstract
The Single Event Effect (SEE) of light ions, often neglected in reliability evaluations, is systematically investigated in this work. In this paper, the carbon ions Single Event Upset (SEU) experiment in Silicon-On-Insulator (SOI) SRAM was carried out, and the Geant4 model was established to analyze the nuclear reaction products of C+ with Si and W. The C+ SEU cross-section has been proved to be one order of magnitude larger than that of a proton with a similar energy. The SEU cross-section caused by the nuclear reaction products of C+ with Si and W, which are larger than the SEU threshold of the device, is one order of magnitude larger than the heavy-ion SEU saturated section of the device. Light ions such as C+, which is widely found in space, are potential safety hazards for aerospace electronic systems.
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