Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage

Abstract

At the 14-/16-nm FinFET technology node, experimental heavy-ion single-event upset (SEU) cross sections have been obtained for a D flip-flop (DFF) with variation in supply voltage over a wide range of particle linear energy transfer (LET). An empirical model for predicting the SEU cross section as a function of supply voltage based on experimental data has been developed and verified. The results are consistent with low-LET particle irradiation findings from previous works that have indicated a strong exponential increase in SEU cross section with supply voltage scaling for FinFET technologies. Furthermore, this paper reveals the impact of supply voltage variations on a sensitive area for high-LET particle irradiation. The increase in cross section from nominal (0.8 V) to a specific reduced supply voltage for high-LET particle irradiation is constant and has been observed through experimental results across the high-LET particle spectrum. The 3-D TCAD simulations are used to characterize sensitive area affecting high-LET supply voltage-dependent SEU cross sections in the FinFET technology. The developed model will allow circuit designers to predict changes in the SEU cross section due to supply voltage variation for the 14-/16-nm technology node without extensive testing.